Dielectric relaxation in chemical vapor deposited phosphosilicate glasses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350617
Reference10 articles.
1. Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon
2. Polarization of Thin Phosphosilicate Glass Films in MGOS Structures
3. Electron trapping in SiO2 at 295 and 77 °K
4. Non-ionic room temperature instabilities in MOS devices
5. Dielectric relaxation in thermally grown SiO2films
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1. Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
2. Mechanism of high density plasma chemical vapor deposition phosphosilicate glass process without in-situ plasma chamber clean;Thin Solid Films;2004-12
3. Active doping instability in n+-p silicon surface avalanche diodes;Solid-State Electronics;1995-02
4. Infrared spectroscopic techniques for quantitative characterization of dielectric thin films on silicon wafers;Spectrochimica Acta Part A: Molecular Spectroscopy;1994-09
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