Zero-field spin splitting in modulation-doped AlxGa1−xN∕GaN two-dimensional electron systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1929876
Reference22 articles.
1. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
2. Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
3. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
4. Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
5. Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wells
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