Dependence of silicon‐on‐insulator transistor parameters on oxygen implantation temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97003
Reference11 articles.
1. Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation
2. The effects of different implantation and annealing temperatures on the structural and chemical properties of high dose oxygen-ion-implanted silicon
3. Microstructure of silicon implanted with high dose oxygen ions
4. Microstructural defects in laser recrystallized, graphite strip heater recrystallized and buried oxide silicon-on-insulator systems: A status report
5. A two-dimensional analysis for MOSFET's fabricated on buried SiO2layer
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1. Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates;Japanese Journal of Applied Physics;1998-02-15
2. Correlation of implantation defects with interface recombination velocities and carrier lifetimes in annealed SIMOX SOI materials by using a contactless optical modulation technique;Solid-State Electronics;1997-08
3. Microscope-spectrophotometric analysis to determine the origins of the colour variations on SIMOX wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
4. Oxygen-related activity and other specific electrical properties of SIMOX;Vacuum;1991-01
5. Optimisation of SIMOX structures formed by ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02
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