Dependence of radiation‐induced interface traps on gate electrode material in metal/SiO2/Si devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96402
Reference15 articles.
1. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
2. Low energy electron irradiation of the Si-SiO2 interface
3. Origin of Interface States and Oxide Charges Generated by Ionizing Radiation
4. Radiation-Induced Defects in SiO2 as Determined with XPS
5. XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 Interface
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi2and TiSi2Gate Electrode Materials;Japanese Journal of Applied Physics;2006-02-24
2. Radiation hardness comparison of MOS capacitors using tungsten polycide and cobalt polycideas gate electrode materials;IEEE Electron Device Letters;2005-07
3. Radiation effects and hardening of MOS technology: devices and circuits;IEEE Transactions on Nuclear Science;2003-06
4. Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment;Microelectronics Reliability;1998-09
5. Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides;Applied Physics Letters;1996-08-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3