Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1839271
Reference13 articles.
1. Defects associated with the accommodation of misfit between crystals
2. Dislocations in strained-layer epitaxy: theory, experiment, and applications
3. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors
4. Control over strain relaxation in Si-based heterostructures
5. Dislocation nucleation near the critical thickness in GeSi/Si strained layers
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