Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) $2\times 1$ Substrates-Reference-Cited by-同舟云学术

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Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) $2\times 1$ Substrates

Published:2023-06-06 Issue: Volume: Page:
ISSN:
Container-title:2023 14th Spanish Conference on Electron Devices (CDE)
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Author:

Martín-Encinar Luis¹,Marqués Luis A.¹,Aboy María¹,López Pedro¹,Santos Iván¹,Pelaz Lourdes¹

Affiliation:

1. Universidad de Valladolid E.T.S.I. Telecomunicación,Departamento de Electricidad y Electrónica,Valladolid,Spain,47011

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10339380/10339408/10339527.pdf?arnumber=10339527

Reference17 articles.

1. Growth and self-organization of SiGe nanostructures

2. Reaction pathways in atomistic models of thin film growth

3. Molecular dynamics simulations of the growth of Ge on Si

4. LAMMPS - a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales

5. Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool

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