Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes-Reference-Cited by-同舟云学术

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Published:2015-04-21 Issue:15 Volume:117 Page:154503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ren Jian¹,Yan Dawei¹,Yang Guofeng¹,Wang Fuxue¹,Xiao Shaoqing¹,Gu Xiaofeng¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China

Funder

Fundamental Research Funds for the Central Universities

Graduate Student Innovation Program for University of Jiangsu Province

Summit of the Six Top Talents Program of Jiangsu Province

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4917566

Reference18 articles.

1. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

2. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

3. Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

4. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

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