Bulk plasma fragmentation in a C4F8inductively coupled plasma: A hybrid modeling study
Author:
Affiliation:
1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China
2. Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp, Belgium
Funder
National Natural Science Foundation of China (NSFC)
Fonds Wetenschappelijk Onderzoek (Research Foundation Flanders)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4923230
Reference58 articles.
1. High rate and highly selective SiO2 etching employing inductively coupled plasma and discussion on reaction kinetics
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3. Surface and gas-phase observations of Ar-diluted c-C4F8 plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence
4. Fluorocarbon-based plasma etching of SiO[sub 2]: Comparison of C[sub 4]F[sub 6]/Ar and C[sub 4]F[sub 8]/Ar discharges
5. Ion and neutral species in C2F6 and CHF3 dielectric etch discharges
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