Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1367310
Reference17 articles.
1. GaN, AlN, and InN: A review
2. Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate
3. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
4. Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time
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2. Ab initio analysis for the initial process of Joule heating in semiconductors;Physical Review B;2021-08-16
3. Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures;Journal of Electronic Materials;2012-06-27
4. Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures;Superlattices and Microstructures;2012-06
5. Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates;The European Physical Journal Applied Physics;2011-08-18
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