Conduction‐type conversion in Si‐doped (311)A GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114521
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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4. Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure;Journal of Crystal Growth;2015-09
5. Optical properties of Be-doped GaAs nanowires on Si substrate grown by a catalyst-free molecular beam epitaxy vapor–liquid–solid method;Japanese Journal of Applied Physics;2014-04-17
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