Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
Author:
Funder
Forschungszentrum Jülich
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-019-3004-0.pdf
Reference56 articles.
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3. Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM (2006) Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441(7092):489–493. https://doi.org/10.1038/nature04796
4. Noor Mohammad S (2011) Why self-catalyzed nanowires are most suitable for large-scale hierarchical integrated designs of nanowire nanoelectronics. J Appl Phys 110(8):084310. https://doi.org/10.1063/1.3624585
5. Das A, Ronen Y, Most Y, Oreg Y, Heiblum M, Shtrikman H (2012) Zero-bias peaks and splitting in an Al-InAs nanowire topological superconductor as a signature of Majorana fermions. Nat Phys 8(12):887–895. https://doi.org/10.1038/nphys2479.1205.7073
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1. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method;Crystals;2022-12-16
2. A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy;Catalysts;2022-04-19
3. Te-doped selective-area grown InAs nanowires for superconducting hybrid devices;Physical Review Materials;2022-02-24
4. A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector;Nanotechnology;2020-10-02
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