The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3249577
Reference22 articles.
1. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
2. A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices
3. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
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