Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor-Reference-Cited by-同舟云学术

Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor

Published:2013-05-13 Issue:19 Volume:102 Page:192912
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Ya-Liang,Young Tai-Fa,Chang Ting-Chang,Shen Fu-Yen,Hsu Jia-Haw,Tsai Tsung-Ming,Chang Kuan-Chang,Chen Hisn-Lu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4807010

Reference19 articles.

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5. T. Nakamura, H. Kitada, Y. Mizushima, N. Maeda, K. Fujimoto, and T. Ohba, in 2011 IEEE International 3D Systems Integration Conference (3DIC), Osaka, Japan, January 31–February 2 (IEEE, 2012), pp. 1–4.

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