High-conductivityn-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1582377
Reference13 articles.
1. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
3. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
4. Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode
5. Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
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1. Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy;Applied Physics Letters;2023-10-30
2. Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition;Applied Physics Letters;2023-06-05
3. Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer;Semiconductor Science and Technology;2022-01-01
4. Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application;Japanese Journal of Applied Physics;2021-08-01
5. Low resistivity of highly Si-doped n-type Al0.62Ga0.38N layer by suppressing self-compensation;Applied Physics Express;2020-01-28
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