Bonding and electronic structures of amorphous SiNx:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337836
Reference9 articles.
1. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique
2. Properties of amorphous semiconductinga−Si:Ha−SiNx:Hmultilayer films and ofa−SiNx:Halloys
3. Amorphous SiN:H dielectrics with low density of defects
4. Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra
5. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
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