Metalorganic vapor phase epitaxy and characterization of boron‐doped (Al,Ga)As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351295
Reference30 articles.
1. Effect of boron on the deep donors (DXcenters) in GaAs:Si
2. Deep donor levels (DXcenters) in III‐V semiconductors
3. Properties of DX Centers in AlxGa1−xAs and Effects on Heterojunction Devices
4. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
5. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
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