MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys-Reference-Cited by-同舟云学术

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MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

Published:2011-05 Issue:18 Volume:509 Page:5631-5636
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wang Qi,Ren Xiaomin,Zhang Lijuan,Yang Yue,Li Tianhe,Huang Hui,Huang Yongqing,Cai Shiwei

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference15 articles.

1. LP-MOCVD growth of ternary BxGa1−xAs epilayers on (001)GaAs substrates using TEB, TMGa and AsH3

2. Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (001)GaAs by low pressure metalorganic chemical vapor deposition

3. Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

4. Structural and optical study of BxInyGa1−x−yAs/GaAs and InyGa1−yAs/GaAs QW's grown by MOCVD

5. Epitaxial growth of BGaAs and BGaInAs by MOCVD

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1. Cl2 corrosion resistance of SiC coatings with different morphologies;Materials Today Communications;2024-06

2. Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface;Journal of Materials Science: Materials in Electronics;2024-01

3. First principle study of the structural, electronic, optical and thermodynamic properties of the cubic Al1−xBxAs ternary alloys;Materials Research Express;2019-08-07

4. Structural, elastic, and optoelectronic properties of ternary alloyBxAl1−xAs;Physica B: Condensed Matter;2018-09

5. LP-MOCVD growth of BGaAsSb thick layers and BGaAsSb/GaAs quantum well structures on GaAs (001) substrates;Journal of Crystal Growth;2014-05

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