Structural and optical study of BxInyGa1−x−yAs/GaAs and InyGa1−yAs/GaAs QW's grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference17 articles.
1. BGaInAs alloys lattice matched to GaAs
2. Electronic structure of BAs and boride III-V alloys
3. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
4. Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs
5. Band-gap bowing effects in BxGa1−xAs alloys
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1. Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface;Journal of Materials Science: Materials in Electronics;2024-01
2. Study on the influence of variable temperature growth on the properties of highly strained InGaAs/GaAs MQWs grown by MOCVD;Journal of Alloys and Compounds;2023-03
3. Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics;Applied Surface Science;2022-03
4. Tuning spontaneous emission in BInGaAs/GaAs QWs by varying the growth temperature: above 1.2 µm emission and solar cells application;Optical and Quantum Electronics;2021-08-17
5. Growth temperature impact on MOVPE-grown BInGaAs/GaAs QWs designed for optoelectronic applications;Journal of Materials Science: Materials in Electronics;2021-07-18
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