Tight-binding studies of the tendency for boron to cluster in c-Si. I. Development of an improved boron–boron model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368408
Reference20 articles.
1. High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena
2. Formation of ultrashallowp+layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing
3. Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing
4. Solid Solubility and Diffusion Coefficients of Boron in Silicon
5. Boron Diffusion into Silicon Using Elemental Boron
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3. Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks;Surface Science Reports;2017-09
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