Formation of ultrashallowp+layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105104
Reference8 articles.
1. Generalized scaling theory and its application to a ¼ micrometer MOSFET design
2. Rapid thermal annealing of BF2+implanted, preamorphized silicon
3. Shallow boron junctions implanted in silicon through a surface oxide
4. 1—2-keV Boron implants into silicon
5. Optimization of BF2+implanted and rapidly annealed junctions in silicon
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1. High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping;Applied Physics Letters;2017-08-21
2. Silicon Device Processing;Materials Science and Technology;2013-02-15
3. High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations;IEEE Transactions on Electron Devices;2010-06
4. Electrical profiles of ultrashallow p+ layers formed in Si by low-energy BF2+ ion implantation;Journal of Applied Physics;2005-04-15
5. Structure and diffusion of interstitial boron pairs in silicon;Physical Review B;2004-01-08
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