Structure and diffusion of interstitial boron pairs in silicon
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.033201/fulltext
Reference25 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Atomic scale models of ion implantation and dopant diffusion in silicon
3. Mechanisms of dopant impurity diffusion in silicon
4. Ab initiopseudopotential calculations of B diffusion and pairing in Si
5. First-Principles Study of Boron Diffusion in Silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections;Journal of Electron Microscopy;2007-04-01
2. Atomistic study of the dissolution of small boron interstitial clusters in c-Si;Applied Physics Letters;2005-11-07
3. Dopants;Computational Microelectronics;2004
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