Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing-Reference-Cited by-同舟云学术

Roles of Extended Defect Evolution on the Anomalous Diffusion of Boron in Si during Rapid Thermal Annealing

Published:1991-04-01 Issue:4 Volume:138 Page:1122-1130
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kim Y. M.¹²³,Lo G. Q.¹²³,Kinoshita H.¹²³,Kwong D. L.¹²³,Tseng H. H.¹²³,Hance R.¹²³

Affiliation:

1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712

2. Advanced Products Research and Development Laboratory, Motorola, Incorporated, Austin, Texas 78762

3. Surface Analysis Laboratory, Motorola, Incorporated, Austin, Texas 78762

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085728/pdf

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