Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356011
Reference22 articles.
1. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
2. Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
3. Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source
4. Photoluminescence identification of the C and Be acceptor levels in InP
5. Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition
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1. A single crystalline InP nanowire photodetector;Applied Physics Letters;2016-08
2. The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiyFilms;Chemical Vapor Deposition;2015-04-27
3. Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces;Industrial & Engineering Chemistry Research;2013-07-23
4. High-performance indium phosphide nanowires synthesized on amorphous substrates: from formation mechanism to optical and electrical transport measurements;J MATER CHEM;2012
5. Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors;Journal of Applied Physics;2010-12
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