Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103092
Reference18 articles.
1. Mechanism of carbon incorporation in MOCVD GaAs
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3. Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers
4. Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
5. Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped base
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