Growth and properties of ion beam synthesized Si/CoxNi1−xSi2/Si(111) structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356476
Reference15 articles.
1. Mesotaxy: Single‐crystal growth of buried CoSi2layers
2. Mesotaxy: Single‐crystal growth of buried CoSi2layers
3. Strain and orientation in epitaxial CoSi2(111) layers formed by ion implantation
4. Formation of buried epitaxial Co silicides by ion implantation
5. Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si
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1. Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer;Journal of Crystal Growth;2009-08
2. Growth of oxide-mediated ternary silicide controlled by a Si cap layer by rapid thermal annealing;Physica E: Low-dimensional Systems and Nanostructures;2008-01
3. Ternary CoxFe(1−x)Si2 and NixFe(1−x)Si2 formed by ion implantation in silicon;Journal of Applied Physics;2002-10
4. Crystal structure characterization of ion-beam-synthesized CoxY1−xSi1.7 silicide;Journal of Applied Physics;1999-05
5. Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation;Journal of Crystal Growth;1998-11
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