Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and electrical characterization of GdSi1.7 epilayers formed by channeled ion beam synthesis;Journal of Applied Physics;2002-03-15
2. Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
3. Electrical properties of rare earth silicides produced by channeled ion beam synthesis;Microelectronic Engineering;2000-01
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