Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3642970
Reference28 articles.
1. Nanocrystal nonvolatile memory devices
2. Simulation of a Ge-Si hetero-nanocrystal memory
3. Room-temperature Si single-electron memory fabricated by nanoimprint lithography
4. Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
5. Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory
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1. Self-assembling mechanism of Si-QDs on thermally grown SiO2;Japanese Journal of Applied Physics;2024-04-01
2. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals;The Journal of Physical Chemistry C;2023-01-05
3. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot;Beilstein Journal of Nanotechnology;2018-04-04
4. Tuning Optical Properties of Ge Nanocrystals by Si Shell;The Journal of Physical Chemistry C;2016-08-16
5. Photoluminescence study of high density Si quantum dots with Ge core;Journal of Applied Physics;2016-01-21
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