Dose dependence of formation of nanoscale cavities in helium-implanted 4H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1611630
Reference22 articles.
1. Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation
2. Effects of irradiation temperature and dose on exfoliation of H+-implanted silicon carbide
3. Introductory remarks — helium in metals
4. In situ EELS and TEM observation of silicon carbide irradiated with helium ions at low temperature and successively annealed
5. In-situ observation of damage evolution in SiC crystals during He+ and H2+ dual-ion beam irradiation
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4. Helium and strontium co-implantation into SiC at room temperature and isochronal annealing: Structural evolution of SiC and migration behaviour of strontium;Materials Chemistry and Physics;2023-01
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