Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2785944
Reference20 articles.
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3. Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides
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