Interface state generation in the Si‐SiO2system by photoinjecting electrons from an Al field plate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93243
Reference15 articles.
1. AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2
2. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
3. Avalanche degradation of hFE
4. THE INTRODUCTION OF CHARGE IN SiO2AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER‐BASE JUNCTION OF GATED TRANSISTORS
5. The Effects of Processing on Hot Electron Trapping in SiO2
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
2. Interface traps creation by sub‐band gap irradiation in silicon dioxide on silicon without applied electric field;Journal of Applied Physics;1996-03
3. Charge Trapping and Interface State Generation in Rapid Thermal Processed Oxide and Nitrided Oxide MOS Capacitors by Electron Photoinjection from Al Gate and Si Substrate;Journal of The Electrochemical Society;1995-03-01
4. Injection spectroscopy of localized states in thin insulating layers on semiconductor surfaces;Progress in Surface Science;1994-12
5. On the generation of interface states from electron‐hole recombination in metal‐oxide‐semiconductor capacitors;Applied Physics Letters;1994-09-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3