Comments on the distinction between ``striations'' and ``swirls'' in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655283
Reference6 articles.
1. Electrical effect of growth striations in the silicon vidicon‐type camera tubes
2. Structure and Origin of Stacking Faults in Epitaxial Silicon
3. Diffraction contrast analysis of two-dimensional defects present in silicon after annealing
4. Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenon
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2. Determination of free charge carrier distribution and micro-segregation of dopants in n-type GaAs;Journal of Crystal Growth;1988-08
3. Charge collection scanning electron microscopy;Journal of Applied Physics;1982-06
4. Laser Damage Gettering and Its Application to Lifetime Improvement in Silicon;Journal of The Electrochemical Society;1981-09-01
5. Material Limitations Which Cause Striations in CCD Imagers;IEEE Journal of Solid-State Circuits;1980-08
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