Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98231
Reference11 articles.
1. Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer
2. MBE growth of extremely high-quality GaAs–AlGaAs GRIN-SCH lasers with a superlattice buffer layer
3. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
4. Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers
5. Generation and propagation of defects into molecular beam epitaxially grown GaAs from an underlying GaAs substrate
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2. 808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice;Journal of Crystal Growth;1997-05
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