Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97166
Reference9 articles.
1. Heterostructure semiconductor lasers prepared by molecular beam epitaxy
2. Improved AlxGa1−xAs bulk lasers with superlattice interfaces
3. MBE growth of extremely high-quality GaAs–AlGaAs GRIN-SCH lasers with a superlattice buffer layer
4. High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
5. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
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