Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3460271
Reference24 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Auger recombination in InGaN measured by photoluminescence
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. Auger recombination rates in nitrides from first principles
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