Surface topology of GaAs(100) after focused ion beam implantation of Si++
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118519
Reference6 articles.
1. Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature
2. Low-damage anisotropic radical-beam ion-beam etching and selective chemical etching of focused-ion-beam-damaged GaAs substrates
3. Damage Formed by $\bf Si^{+}$ Implantation in GaAs
4. Fabrication and characterization of submicron gratings written in planar silica glass with a focused ion beam
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1. Tuning Surface Wettability at the Submicron-Scale: Effect of Focused Ion Beam Irradiation on a Self-Assembled Monolayer;The Journal of Physical Chemistry C;2015-12-22
2. Droplet Nucleation on a Well-Defined Hydrophilic–Hydrophobic Surface of 10 nm Order Resolution;Langmuir;2014-11-20
3. Molecular dynamics simulation of Ga+ ion collision process;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
4. Molecular dynamics simulation of surface deformation via Ar+ ion collision process;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
5. Control of Swelling Height of Si Crystal by Irradiating Ar Beam;Journal of Nanoscience and Nanotechnology;2012-01-01
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