In-situ SiNx/InN structures for InN field-effect transistors-Reference-Cited by-同舟云学术

In-situ SiNx/InN structures for InN field-effect transistors

Published:2016-04-04 Issue:14 Volume:108 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zervos Ch.¹²,Adikimenakis A.¹,Beleniotis P.²,Kostopoulos A.¹,Kayambaki M.¹,Tsagaraki K.¹,Konstantinidis G.¹^ORCID,Georgakilas A.¹²

Affiliation:

1. Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-70013 Heraklion, Crete, Greece

2. Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete, Greece

Funder

General Secretariat for Research and Technology (GSRT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945668

Reference32 articles.

1. Electron mobility in indium nitride

2. Low-field electron mobility in wurtzite InN

3. Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

4. Potential performance of indium-nitride-based devices

5. N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

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