Reaction of GeO2 with Ge and crystallization of GeO2 on Ge-Reference-Cited by-同舟云学术

Reaction of GeO2 with Ge and crystallization of GeO2 on Ge

Published:2020-01-14 Issue:2 Volume:127 Page:024101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Xie Min¹^ORCID,Nishimura Tomonori¹^ORCID,Yajima Takeaki¹,Toriumi Akira¹

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Tokyo 113-8656, Japan

Funder

Japan Society for the Promotion of Science

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120886

Reference17 articles.

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3. High-k/Ge MOSFETs for future nanoelectronics

4. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

5. R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi, “High mobility Ge pMOSFETs with ∼ 1 nm thin EOT using Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation,” in Symposium on VLSI Technology Digest of Technical Papers (JSAP, Kyoto, Japan, 2011), p. 56.

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