InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
Author:
Affiliation:
1. imec, Leuven 3001, Belgium
2. University of Sao Paulo, Sao Paulo, Brazil
3. KULeuven, Leuven, Belgium
4. UNESP, Univ Estadual Paulista, Sao Paulo, Brazil
Funder
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Agentschap voor Innovatie door Wetenschap en Technologie (IWT)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4971830
Reference20 articles.
1. High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
2. Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
3. III-V Heterostructure Nanowire Tunnel FETs
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