Reaction of the Si/Ta/Ti system: C40 TiSi2 phase formation andin situkinetics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1421212
Reference14 articles.
1. Metastable phase formation in titanium‐silicon thin films
2. Effect of the linewidth reduction on the characteristic time spread in C49–C54 phase transition
3. Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation
4. Low temperature formation of C54–TiSi2 using titanium alloys
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1. Lattice stability and point defect energetics of TiSi2 and TiGe2 allotropes from first-principles calculations;Journal of Applied Physics;2021-02-28
2. Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature;Journal of Applied Physics;2020-08
3. The Effect of Film Thickness on the C40 TiSi[sub 2] to C54 TiSi[sub 2] Transition Temperature;Journal of The Electrochemical Society;2005
4. Influence of defects on the kinetic of C49–C54 TiSi2 transformation;Applied Physics Letters;2004-12-06
5. Evolution of microstructure in Ti–Ta bilayer thin films on polycrystalline-Si and Si(001);Thin Solid Films;2004-11
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