A two‐dimensional analytical solution of the diffusion equation for silicon‐on‐insulator structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340345
Reference11 articles.
1. Silicon on Insulator by High Dose Implantation
2. On Redistribution of Boron during Thermal Oxidation of Silicon
3. A comprehensive two-dimensional VLSI process simulation program, BICEPS
4. Two-dimensional simulation of a 2-µm CMOS process using ROMANS II
5. Theoretical Considerations on Lateral Spread of Implanted Ions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Boron Diffusion in Silicon‐on‐Insulator Structures Formed by Oxygen Implantation;Journal of The Electrochemical Society;1990-07-01
2. A pile‐up phenomenon during arsenic diffusion in silicon‐on‐insulator structures formed by oxygen implantation;Journal of Applied Physics;1989-10-15
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