A pile‐up phenomenon during arsenic diffusion in silicon‐on‐insulator structures formed by oxygen implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344063
Reference19 articles.
1. VLSI Process modeling—SUPREM III
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4. Microscopic Theory of Impurity-Defect Reactions and Impurity Diffusion in Silicon
5. Transient enhanced diffusion of dopants in silicon induced by implantation damage
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