High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125469
Reference12 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Correlation between structural, optical, and electrical properties of GaAs grown on (001) Si
3. Electrical properties of wafer-bonded GaAs/Si heterojunctions
4. Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients
5. Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si
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