Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si-Reference-Cited by-同舟云学术

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Direct Wafer Bonding of a (001) InP-Based Strained Multiple Quantum Well on a (110) Si Substrate with a GaAs Buffer Layer, Aligning Cleavage Planes of InP and Si

Published:1996-12-15 Issue:Part 2, No. 12B Volume:35 Page:L1652-L1654
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okuno Yae,Tamura Masao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel direct MOCVD growth of InxGa1−xAs and InP metamorphic layers on GaAs substrates;Journal of Materials Science: Materials in Electronics;2006-04

2. A review of direct metamorphic InxGa1−xAs and InP epilayers on GaAs substrates by MOCVD;Crystallography Reviews;2006-01

3. Changes in interfacial bonding energies in the chemical activation of GaAs surfaces;Journal of Electronic Materials;2005-07

4. Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2003-08-15

5. GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding;Applied Physics Letters;2003-06-02

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