Electrical properties of wafer-bonded GaAs/Si heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122454
Reference7 articles.
1. High‐performance InGaAs photodetectors on Si and GaAs substrates
2. Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients
3. Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
4. Wafer bonding technology and its applications in optoelectronic devices and materials
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