Properties of Schottky contact of Al on SiGe alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115733
Reference12 articles.
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics;Materials Science in Semiconductor Processing;2024-06
2. TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe;IEEE Transactions on Electron Devices;2017-02
3. Rectifying and Schottky characteristics of a-SixGe1−xOy with metal contacts;Canadian Journal of Physics;2014-07
4. Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers;Thin Solid Films;2012-11
5. Electrical properties of rolled-up p-type Si/SiGe heterostructures;Applied Physics Letters;2011-05-09
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