Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers-Reference-Cited by-同舟云学术

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Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers

Published:2012-11 Issue: Volume:522 Page:267-273
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mallik S.,Mukherjee C.,Mahata C.,Hota M.K.,Das T.,Dalapati G.K.,GaO H.,Kumar M.K.,Chi D.Z.,Sarkar C.K.,Maiti C.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Introduction to Terahertz Pulses

2. Applications of silicon–germanium heterostructure devices;Maiti,2001

3. Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers

4. Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)

5. High-κ gate dielectrics: Current status and materials properties considerations

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1. Thermal evaporation of lead-free inorganic perovskite CsGeI₃ for photodetection;Applied Physics Letters;2022-09-05

2. Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers;Bulletin of Materials Science;2022-02-20

3. Impact of post metal annealing on gate work function engineering for advanced MOS applications;AIP Conference Proceedings;2016

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