Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3590254
Reference18 articles.
1. Twenty-two percent efficiency HIT solar cell
2. Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
3. Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data
4. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
5. Limitations of a simplified dangling bond recombination model for a-Si:H
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