Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1471569
Reference16 articles.
1. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. Midinfrared emission from InGaN/GaN-based light-emitting diodes
4. Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm
5. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
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