Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications
Author:
Affiliation:
1. Microelectronics Group, Space Applications CentreISRO Ahmedabad India
2. Department of AvionicsIndian Institute of Space Science and Technology Thiruvanthpuram India
Publisher
American Geophysical Union (AGU)
Subject
Electrical and Electronic Engineering,General Earth and Planetary Sciences,Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1029/2019RS006844
Reference31 articles.
1. Inter-subband optical transitions in a surface space-charge layer
2. Electronic properties of two-dimensional systems
3. Collective intersubband resonances of inversion electrons on GaAs
4. Plasma-Wave Detectors for Terahertz Wireless Communication
5. Envelope-function formalism for electrons in abrupt heterostructures with material-dependent basis functions
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