Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects-Reference-Cited by-同舟云学术

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Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects

Published:2019-03 Issue: Volume:127 Page:157-164
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Oubram O.,Navarro O.,Rodriguez-Vargas I.,Gaggero-Sager L.M.,Noverola H.G.

Funder

UNAM México

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Refractive index changes in AlGaN/GaN heterostructure field-effect transistors

2. Linear and nonlinear magneto-optical properties of an off-center single dopant in a spherical core/shell quantum dot

3. Electron transport in Al Ga1−As δ-MIGFETs: Conductivity enhancement induced by magnetic field effects

4. Nonlinear optical rectification and second and third harmonic generation in GaAs systems under hydrostatic pressure

5. The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure

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1. Efectos del desorden estructural sobre el cambio en el índice de refracción de un sistema δ-dopado simple en GaAs;Revista Mexicana de Física;2024-07-01

2. Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs;Journal of Physics: Condensed Matter;2023-07-06

3. Hydrostatic pressure and interlayer distance effects on non-linear optical proprieties in n-type double delta-doped GaAs quantum wells;Physica Scripta;2020-09-03

4. Model of n-type quadruple δ-doped GaAs quantum wells;The European Physical Journal B;2020-01

5. Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*;Chinese Physics B;2019-12-01

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